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Investigation of metal alloy reaction temperatures in solution‐based AlZnSnO thin‐film transistors
Author(s) -
Jo KwangWon,
Cho WonJu
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201431089
Subject(s) - materials science , alloy , thin film transistor , metal , thin film , transistor , deposition (geology) , metallurgy , chemical engineering , composite material , nanotechnology , layer (electronics) , electrical engineering , voltage , paleontology , engineering , sediment , biology
AlZnSnO (AZTO) thin‐film transistors (TFTs) were fabricated using an approach based on solution deposition and spin coating. The effects of metal alloy reaction temperatures ranging from 180 to 250 °C were investigated on the chemical stability and electronic characteristics of solution‐based AZTO TFTs of heat treatment temperatures from 180 to 250 °C. Small differences in temperature during the metal alloy reaction lead to large changes in electrical properties. This study shows that the electrical performance and the chemical stability of AZTO channels are improved at the expense of one another, as a function of the metal alloy heat treatment temperature.