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Reference‐free, depth‐dependent characterization of nanolayers and gradient systems with advanced grazing incidence X‐ray fluorescence analysis
Author(s) -
Hönicke Philipp,
Detlefs Blanka,
Müller Matthias,
Darlatt Erik,
Nolot Emmanuel,
Grampeix Helen,
Beckhoff Burkhard
Publication year - 2015
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201400204
Subject(s) - reflectometry , characterization (materials science) , x ray reflectivity , materials science , x ray fluorescence , dopant , metrology , x ray optics , optics , optoelectronics , x ray , fluorescence , nanotechnology , thin film , doping , computer science , physics , time domain , computer vision
Thin high‐ κ layers and stacks as well as ultra shallow dopant profiles are technologically relevant nanoscaled systems for current and future electronic devices. The characterization of such systems presents several metrological challenges and requires further development of the available analytical techniques. Grazing incidence X‐ray fluorescence (GIXRF) in combination with X‐ray reflectometry (XRR) can significantly contribute to the characterization of nanoscaled samples by improved modeling of the X‐ray standing wave (XSW) field induced by the incident X‐rays. In conjunction with the in‐house built radiometrically calibrated instrumentation of the Physikalisch–Technische Bundesanstalt, the method allows for reference‐free quantitative in‐depth analysis. The capabilities of the combined XRR‐GIXRF method are shown on the example of several nanoscaled systems, including ultra‐shallow Al dopant profiles in Si, HfO 2 , and Al 2 O 3 nanolaminates and self‐assembled multilayers of organic tetralactam macrocycles.