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Effect of Ag doping on the microstructure and photoluminescence of ZnO nanostructures
Author(s) -
Khranovskyy Volodymyr,
Tsiaoussis Ioannis,
Eriksson Martin,
Yakimova Rositza
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201400008
Subject(s) - photoluminescence , nanorod , materials science , stacking , dopant , doping , stacking fault , microstructure , chemical vapor deposition , nanostructure , nanotechnology , optoelectronics , composite material , chemistry , dislocation , organic chemistry
ZnO nanostructures were obtained by metal‐organic chemical vapor deposition via Ag catalyst‐assisted growth in a temperature range of 200–500 °C. Growth at temperatures above 500 °C resulted in vertically aligned ZnO nanorods (NLs). Ag incorporation into ZnO up to 0.4 at.% promoted creation of basal plane stacking fault (BSF) defects and corrugation of the side facets of the NLs. The presence of BSFs give rise to an additional photoluminescence peak with a wavelength of ∼386 nm, which is slightly red‐shifted compared to the commonly observed NBE emission at ∼375 nm. The observed emission was found to be specifically observed from the side facets of the NLs. It is suggested that this emission is due to a high concentration of BSFs in the ZnO as a result of an incorporation of Ag as acceptor dopant. SEM image of an Ag‐doped ZnO nanorod with corrugated side facets. The observed corrugation is accompanied by a high concentration of basal plane stacking faults.