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Cross‐sectional TEM imaging of β‐ G a 2 O 3 thin films formed on c ‐plane and a ‐plane sapphire substrates (Phys. Status Solidi A 9∕2013)
Author(s) -
Nakagomi Shinji,
Kokubun Yoshihiro
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201370055
Subject(s) - sapphire , transmission electron microscopy , materials science , diffraction , cross section (physics) , electron diffraction , thin film , plane (geometry) , crystallography , rotation (mathematics) , optics , chemistry , physics , nanotechnology , geometry , laser , mathematics , quantum mechanics
Nakagomi and Kokubun (pp. 1738–1744 ) investigated the micro‐structure of β‐Ga 2 O 3 thin films formed on c ‐plane and a ‐plane sapphire substrates prepared by gallium evaporation in an oxygen plasma. Cross‐sectional transmission electron microscopy (TEM) images and electron diffraction patterns were obtained from a cross section of β‐Ga 2 O 3 on a sapphire substrate. The results indicate that TEM images and electron diffraction patterns can be classified into four types according to the rotation angle of the unit cell of (‐201)‐oriented β‐Ga 2 O 3 . The authors explain the reason for the appearance of the four types of cross sectional TEM image using crystal orientation. The classification was summarized in a table that is expected to be useful for further studies on β‐Ga 2 O 3 .