Room temperature ferroelectric properties and leakage current characterics of Bi 2 FeMnO 6 /SrTiO 3 bilayered thin films by chemical solution deposition

Bi 2 FeMnO 6 /SrTiO 3 (BFMO/STO) bilayered thin films were grown on LaNiO 3 (LNO) buffered Si(100) substrate by chemical solution deposition. The structure and surface morphology of the bilayered thin films have been characterized by X‐ray diffraction and atomic force microscopy. The Au/BFMO/STO/LNO thin‐film capacitor showed well‐saturated hysteresis loop at an applied field of 330 kV cm −1 with remnant polarization (2 P r ) and coercive electric field (2 E c ) values of 1.3 μC cm −2 and 80 kV cm −1 , respectively. The films show leakage current density in the order of 10 −5  A cm −2 in the whole electric field region. The leakage current depended on the voltage polarity. The Au/BFMO/STO interface forms an Ohmic contact with Au electrode biased negatively. At low electric field, the BFMO/STO/LNO interface forms an Ohmic contact with LNO electrode biased negatively. A further increase of applied electric field, the conduction shows a space‐charge‐limited‐current behavior.