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Room temperature ferroelectric properties and leakage current characterics of Bi 2 FeMnO 6 /SrTiO 3 bilayered thin films by chemical solution deposition
Author(s) -
Shen L. M.,
Tang X. G.,
Liu Q. X.,
Jiang Y. P.,
Wang Y. G.,
Li W. P.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330617
Subject(s) - ohmic contact , materials science , thin film , lanio , electric field , ferroelectricity , electrode , leakage (economics) , polarization (electrochemistry) , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , dielectric , physics , macroeconomics , layer (electronics) , quantum mechanics , chromatography , economics
Bi 2 FeMnO 6 /SrTiO 3 (BFMO/STO) bilayered thin films were grown on LaNiO 3 (LNO) buffered Si(100) substrate by chemical solution deposition. The structure and surface morphology of the bilayered thin films have been characterized by X‐ray diffraction and atomic force microscopy. The Au/BFMO/STO/LNO thin‐film capacitor showed well‐saturated hysteresis loop at an applied field of 330 kV cm −1 with remnant polarization (2 P r ) and coercive electric field (2 E c ) values of 1.3 μC cm −2 and 80 kV cm −1 , respectively. The films show leakage current density in the order of 10 −5 A cm −2 in the whole electric field region. The leakage current depended on the voltage polarity. The Au/BFMO/STO interface forms an Ohmic contact with Au electrode biased negatively. At low electric field, the BFMO/STO/LNO interface forms an Ohmic contact with LNO electrode biased negatively. A further increase of applied electric field, the conduction shows a space‐charge‐limited‐current behavior.