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Photosensitization of ZnO single crystal electrodes with PbS quantum dots
Author(s) -
Liang Yongqi,
Novet Thomas,
Thorne James E.,
Parkinson Bruce A.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330602
Subject(s) - quantum dot , materials science , optoelectronics , ferrocene , acceptor , band gap , electrode , acetonitrile , single crystal , crystal (programming language) , schottky diode , infrared , chemistry , optics , electrochemistry , crystallography , diode , condensed matter physics , physics , chromatography , computer science , programming language
Mott–Schottky analysis is used to determine the band edge positions for ZnO single crystals in acetonitrile electrolytes. The band alignment between ZnO and PbS QDs suggests that electron injection can occur for PbS quantum dots (QDs) over a wide range of sizes. Sensitization of ZnO single crystal electrodes with PbS QDs is then demonstrated using ferrocene/ferrocenium as the regenerator (hole acceptor). The largest 5.5 nm QDs are sensitizing the ZnO out to 1580 nm or 0.84 eV, to our knowledge the longest wavelength sensitization measured for any oxide semiconductor. The driving force for the hole transfer from the 5.5 nm PbS QDs with a band gap of 0.84 eV using ferrocene/ferrocenium regenerator in acetonitrile is found to be close to zero, which may result in a high open circuit voltages for QDs sensitized solar cells (QDSSCs) with a spectral response extending well into the infrared.