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Implementation of complementary resistive switch for image matching through back‐to‐back connection of ITO/TiO 2− x /TiO 2 /ITO memristors
Author(s) -
Lee SangJin,
Kim SungJin,
Cho Kyoungrok,
Eshraghian Kamran
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330558
Subject(s) - crossbar switch , resistive random access memory , memristor , computer science , resistive touchscreen , hamming distance , heterojunction , architecture , connection (principal bundle) , computer architecture , electronic engineering , electrical engineering , optoelectronics , materials science , telecommunications , voltage , engineering , computer vision , algorithm , art , visual arts , structural engineering
Nanoscale memristive structures realized through combination of metal–insulator–metal (MIM) processing technologies have paved the way for efficient adoption of memory constructs such as ReRAM crossbar essential for mapping of new and emerging architectures. A noticeable drawback of the crossbar architecture is the existence of sneak‐path currents between adjacent cells. Varieties of approaches including the complementary resistive switch (CRS) architecture offered as possible solution. This paper presents a memristor with heterojunction architecture ITO/TiO 2− x /TiO 2 /ITO and implements CRS by anti‐serial (back‐to‐back) connection of two memristive devices. For the application of this concept, implementation of an imaging search engine based on Hamming distance measure simply highlights the versatility of this novel technology.