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Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates
Author(s) -
Jeon Youngin,
Kim Sangsig
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330555
Subject(s) - stacking , materials science , nanowire , optoelectronics , substrate (aquarium) , bent molecular geometry , transistor , nanotechnology , composite material , electrical engineering , voltage , geology , oceanography , physics , engineering , nuclear magnetic resonance
In this paper, we demonstrate the vertical stacking of ZnO nanowire (NW) field‐effect transistors (FETs), a ZnO NW‐based nanofloating gate memory (NFGM) device, and a ZnO NW‐based inverter on a flexible plastic substrate. For the vertical stacking, four ZnO NW devices are sequentially constructed on each of four layers, and these devices are isolated from each other using Al 2 O 3 material. Each of the stacked ZnO NW devices exhibits the good electrical characteristics with n‐type depletion modes under both the flat and bent states. Moreover, the switching, memory, and inverting characteristics of the stacked ZnO NW devices are examined.