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P–I–N–P top‐emitting organic light‐emitting diodes with MoO x as the electrical and optical modification layers
Author(s) -
Xie Guohua,
Fehse Karsten,
Leo Karl,
Gather Malte C.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330527
Subject(s) - anode , cathode , optoelectronics , materials science , dopant , doping , diode , light emitting diode , layer (electronics) , stack (abstract data type) , oled , quantum efficiency , electrode , chemistry , nanotechnology , computer science , programming language
We report a P–I–N–P top‐emitting organic light‐emitting diode (TEOLED) that contains an additional p‐doped hole transporting layer between the conventional n‐doped electron transporting layer and the top cathode. The TEOLED comprises MoO x in different positions of the device stack (i) as a buffer layer and a p‐dopant to improve the hole injection efficiency from the anode side and to form an abrupt tunnel junction at the cathode side and (ii) a capping layer to tailor the out‐coupling efficiency. The N–P tunnel junction provides a simple approach for balancing charge injection and thus results in simultaneous improvements on current, power and external quantum efficiencies (maxima of 39, 35, and 45%, respectively).