P–I–N–P top‐emitting organic light‐emitting diodes with MoO  x   as the electrical and optical modification layers | Zendy

Xie Guohua | Zendy; Fehse Karsten | Zendy; Leo Karl | Zendy; Gather Malte C. | Zendy

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P–I–N–P top‐emitting organic light‐emitting diodes with MoO x as the electrical and optical modification layers

Author(s) -

Xie Guohua,

Fehse Karsten,

Leo Karl,

Gather Malte C.

Publication year - 2014

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201330527

Subject(s) - anode , cathode , optoelectronics , materials science , dopant , doping , diode , light emitting diode , layer (electronics) , stack (abstract data type) , oled , quantum efficiency , electrode , chemistry , nanotechnology , computer science , programming language

We report a P–I–N–P top‐emitting organic light‐emitting diode (TEOLED) that contains an additional p‐doped hole transporting layer between the conventional n‐doped electron transporting layer and the top cathode. The TEOLED comprises MoO x in different positions of the device stack (i) as a buffer layer and a p‐dopant to improve the hole injection efficiency from the anode side and to form an abrupt tunnel junction at the cathode side and (ii) a capping layer to tailor the out‐coupling efficiency. The N–P tunnel junction provides a simple approach for balancing charge injection and thus results in simultaneous improvements on current, power and external quantum efficiencies (maxima of 39, 35, and 45%, respectively).

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