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Analysis of GaN‐based light‐emitting diodes degraded by generation of deep‐level states
Author(s) -
Jung Eunjin,
Kim Hyunsoo
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330501
Subject(s) - light emitting diode , optoelectronics , materials science , diode , junction temperature , wide bandgap semiconductor , optics , physics , power (physics) , quantum mechanics
GaN‐based light‐emitting diodes (LEDs) degraded by the generation of deep‐level states were analyzed by means of temperature dependent current–voltage measurements. After accelerated aging test of LEDs, the density of deep‐level states was found to increase by a factor of ∼5.0, which resulted in an increase in junction temperature of 7 °C associated with increased nonradiative recombination. The optical microscopy images of LEDs under zero bias (left) and 50 µA (right).