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ZnO nanowire field‐effect transistors with Pt nanocrystals fabricated on a flexible plastic substrate for a non‐volatile memory application
Author(s) -
Lee Myeongwon,
Jeon Youngin,
Kim Sangsig
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330499
Subject(s) - materials science , transistor , nanocrystal , optoelectronics , nanowire , substrate (aquarium) , hysteresis , non volatile memory , threshold voltage , quantum tunnelling , memory cell , nanotechnology , voltage , dielectric , electrical engineering , condensed matter physics , oceanography , physics , engineering , geology
In this work, a single ZnO nanowire field‐effect transistor (NWFET) with discrete‐trap storage nodes of Pt nanocrystals (NCs) embedded within Al 2 O 3 , a high‐κ tunneling/control dielectric material, was successfully fabricated on a flexible plastic substrate for a non‐volatile memory application. The ZnO NWFET with embedded Pt NCs exhibits a clear hysteresis loop with a threshold voltage shift of 4.16 V under the ±15 V gate–source voltage sweep ranges, implying that the charging and discharging phenomena occur during the program/erase operations. The ZnO NWFET achieves a reasonable value of approximately 10 5 for the on/off current ratio for read‐out of storage data. Furthermore, memory features, such as programming efficiency and on‐cell current, are compared between the flat and convexly bent states in order to investigate the feasibility of flexible plastic devices as transistors.