Premium
Improvement on InGaN‐based light emitting diodes using p‐GaN layer grown at low temperature in full N 2 environment
Author(s) -
Deng Zhen,
Jiang Yang,
Zuo Peng,
Fang Yutao,
Ma Ziguang,
Jia Haiqiang,
Zhou Junming,
Chen Hong
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330490
Subject(s) - light emitting diode , materials science , voltage droop , optoelectronics , electroluminescence , diode , doping , blueshift , layer (electronics) , wavelength , blue light , power (physics) , photoluminescence , nanotechnology , physics , quantum mechanics , voltage divider
A method is suggested to improve the characteristics of light emitting diodes (LEDs) by using p‐GaN structure with heavily Mg‐doping grown at low temperature in full N 2 environment. The LED exhibits a 36.4% enhancement in light output power (LOP) at 222 A cm −2 due to the higher hole concentration as compared to the normal p‐GaN layer. Meanwhile, the experimental results prove that the optimized LED structure shows reduced efficiency droop behavior, smaller peak wavelength blueshift and narrower electroluminescence (EL) spectrum broadening.