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Influence of precursor sulfur content on film formation and the properties of sulfurized Cu 2 ZnSnS 4 thin films for solar cells
Author(s) -
Son DaeHo,
Kim DaeHwan,
Yang KeeJeong,
Nam Dahyun,
Gansukh Mungunshagai,
Cheong Hyeonsik,
Kang JinKyu
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330425
Subject(s) - czts , materials science , annealing (glass) , open circuit voltage , thin film , fabrication , sulfur , metal , chemical engineering , short circuit , solar cell , kesterite , chemical vapor deposition , layer (electronics) , sputtering , nanotechnology , metallurgy , optoelectronics , voltage , medicine , physics , alternative medicine , pathology , quantum mechanics , engineering
This is the Cu 2 ZnSnS 4 (CZTS) films were fabricated on glass substrates by sputtering using compound material targets. The fabrication method combines the deposition of metallic precursors and the sulfurization annealing process using S vapor. The optimal precursor sequence for CZTS growth was Cu/SnS/ZnS/Mo. To optimize the composition and the thickness of CZTS, the thickness of Cu layer and precursor was varied. The best cell had an area of 0.185 cm 2 , Cu/(Zn + Sn) = 0.89, Zn/Sn = 1.04, and S/(metal) = 1.13 and showed an open‐circuit voltage ( V OC ) of 0.66 V, a short‐circuit current ( J SC ) of 13.60 mA cm −2 , a fill factor of 43.14% and a conversion efficiency of 3.84%.
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