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Improvement effect of electrical properties in post‐annealed wafer‐bonded Ge(001)‐ OI substrate
Author(s) -
Yamasaka Shuto,
Nakamura Yoshiaki,
Yoshitake Osamu,
Kikkawa Jun,
Izunome Koji,
Sakai Akira
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330385
Subject(s) - annealing (glass) , materials science , threshold voltage , wafer , transistor , field effect transistor , optoelectronics , germanium , semiconductor , cmos , oxide , voltage , analytical chemistry (journal) , silicon , electrical engineering , composite material , metallurgy , chemistry , engineering , chromatography
Abstract We investigated the electrical properties of non‐doped wafer‐bonded germanium‐on‐insulator substrates (Ge(001)‐OI) post‐annealed in various ambiences using a pseudo‐metal‐oxide‐semiconductor field effect transistor. The transistor operation in the Ge(001)‐OI without post‐annealing was observed in the n‐channel mode with hysteresis in the channel conductance versus gate voltage curves. The n‐channel transistor operation was depletion type, with a large threshold voltage shift from the ideal threshold voltage (∼0 eV). Upon post‐annealing the Ge(001)‐OI, the behavior of the hysteresis and threshold voltage shift caused by interface defects was improved, which strongly depended on the post‐annealing condition. Post‐annealing in a N 2 ambience yielded the most effective improvement, which included some O 2 gas. This improvement is presumably because oxygen vacancies near the Ge/SiO 2 interfaces are reduced by the oxygen supply during the post‐annealing treatment.