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Rectifying behavior and photoinduced characteristic in La‐doped Ba S n O 3 /p‐ S i heterojunctions
Author(s) -
Luo B. C.,
Wang J.,
Cao X. S.,
Jin K. X.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330363
Subject(s) - photocurrent , heterojunction , materials science , optoelectronics , reverse bias , doping , biasing , penetration depth , laser , voltage , optics , physics , quantum mechanics , diode
Photoinduced properties of Ba 0.99 La 0.01 SnO 3 /p‐Si heterojunctions that exhibit rectifying characteristic have been investigated. It is found that the heterojunction shows particular photoinduced characteristics at reverse bias when illuminated by violet or green light. The photocurrent rises rapidly with reverse bias but saturates beyond a critical voltage under green light illumination, whereas the photocurrent shows a linear increase with reverse bias under violet light illumination. Given the experimental results, we attribute the observed photoinduced behavior to the balancing sequence of the width of the depleted layer and the penetration depth of the laser in the heterojunction.