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Magnetron sputtering of epitaxial Zr B 2 thin films on 4 H ‐ S i C (0001) and Si(111)
Author(s) -
Tengdelius Lina,
Birch Jens,
Lu Jun,
Hultman Lars,
Forsberg Urban,
Janzén Erik,
Högberg Hans
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330308
Subject(s) - epitaxy , thin film , sputtering , sputter deposition , materials science , analytical chemistry (journal) , cavity magnetron , diffraction , crystallography , chemistry , composite material , nanotechnology , optics , layer (electronics) , physics , chromatography
Epitaxial ZrB 2 thin films were deposited at a temperature of 900 °C on 4H‐SiC(0001) and Si(111) substrates by magnetron sputtering from a ZrB 2 source at a high rate ∼80 nm/min. The films were analyzed by thin film X‐ray diffraction including pole figure measurements and reciprocal space mapping as well as high‐resolution electron microscopy.