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Temperature‐dependent structure and magnetism of Mn‐doped Ge nanowires
Author(s) -
Majumdar S.,
Bhaumik S.,
Rana K.,
Ray S. K.,
Das A. K.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330297
Subject(s) - nanowire , nucleation , materials science , magnetism , germanium , cluster (spacecraft) , doping , matrix (chemical analysis) , crystallography , condensed matter physics , phase (matter) , nanotechnology , chemistry , metallurgy , optoelectronics , silicon , physics , organic chemistry , composite material , computer science , programming language
We report a study on the growth temperature dependent phase formation and its magnetic property in Mn‐doped Ge nanowires (NWs) fabricated at temperature ( T G ) varying from 600 to 900 °C using vapor–liquid–solid technique. Structural and magnetic measurements on the nanowires reveal that Mn are not homogeneously distributed in Ge‐matrix, but atomic clusters (Mn‐rich regions) are formed in lightly doped Ge matrix (GeMn‐matrix) at 600 °C. Upon increasing T G , Ge 3 Mn 5 compound starts to nucleate in expense of atomic clusters following the migration of Mn from GeMn‐matrix. At 900 °C, only precipitates of Ge 3 Mn 5 in cluster‐free Ge‐matrix are found.