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Deep‐ultraviolet Al G a N light‐emitting diodes with variable quantum well and barrier widths
Author(s) -
Kim Su Jin,
Kim Tae Geun
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330258
Subject(s) - quantum efficiency , light emitting diode , optoelectronics , ultraviolet , diode , materials science , quantum well , quantum , physics , chemistry , optics , quantum mechanics , laser
In this study, a device scheme for improving the internal quantum efficiency (IQE) of AlGaN‐based deep‐ultraviolet light‐emitting diodes (DUV‐LEDs) is proposed and numerically investigated using SimuLED software. By step‐increasing the thickness of the quantum wells and step‐decreasing the thickness of quantum barriers in a multiple quantum well (MQW) structure, the IQE of a DUV‐LED at 20 mA is increased by a factor of approximately 1.3 relative to the reference LED. These improvements are attributed to increased radiative recombination rates resulting from enhanced hole injection and uniform carrier distribution within the MQWs.