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Effect of boron addition on interface microstructure and thermal conductivity of Cu/diamond composites produced by high temperature–high pressure method
Author(s) -
He Jinshan,
Zhang Hailong,
Zhang Yang,
Zhao Yameng,
Wang Xitao
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330237
Subject(s) - thermal conductivity , diamond , materials science , microstructure , composite material , composite number , boron , alloy , chemistry , organic chemistry
In order to obtain high thermal conductivity materials for efficient heat sink applications, diamond particles dispersed CuB alloy matrix composites (CuB/diamond composites) containing diamond as high as 90 vol.% were produced by a high temperature–high pressure infiltration method. The thermal conductivity of the Cu–0.3 wt.%B/diamond composite was measured to be 731 W m −1 K −1 . The presence of B 4 C on the surface of diamond was identified by Raman scattering. The influence of B addition on interface microstructure was clarified to interpret the thermal conductivity enhancement. The results show that B addition can improve the thermal conductivity of Cu/diamond composites produced by high temperature–high pressure infiltration method.