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Reactively magnetron sputtered Bi 2 O 3 thin films: Analysis of structure, optoelectronic, interface, and photovoltaic properties
Author(s) -
Morasch Jan,
Li Shunyi,
Brötz Joachim,
Jaegermann Wolfram,
Klein Andreas
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330216
Subject(s) - x ray photoelectron spectroscopy , materials science , thin film , sputter deposition , analytical chemistry (journal) , cavity magnetron , optoelectronics , spectroscopy , capacitance , solar cell , semiconductor , sputtering , electrode , chemistry , nanotechnology , nuclear magnetic resonance , physics , chromatography , quantum mechanics
Bi 2 O 3 thin films deposited by RF magnetron sputtering have been studied in situ by using photoelectron spectroscopy. UV/VIS transmission spectroscopy and XRD measurements were carried out to determine the optical and structural properties of the films. Thin film solar cells were built up with ITO|Bi 2 O 3 |Au layer structures. These devices were characterized by current–voltage and capacitance–frequency measurements. Open‐circuit voltages up to 680 mV and short‐circuit current densities of about 0.3 mA cm −2 were observed. In addition, relative permittivities of approximately 45 have been measured. In order to determine the energy band alignment of Bi 2 O 3 with different contact materials, interface experiments were carried out. With stepwise depositions of the contact material combined with in situ observation of the Fermi level shift via X‐ray photoelectron spectroscopy, it is possible to measure the energy barrier height between a semiconductor and a metallic contact. The work functions of the different materials were determined by UV photoelectron spectroscopy.