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Characteristics of Zn O Schottky photodiode and effects of high‐energy proton irradiation
Author(s) -
Narita S.,
Endo H.,
Chiba T.,
Sakemi Y.,
Itoh M.,
Yoshida H.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330214
Subject(s) - photodiode , responsivity , schottky diode , dark current , irradiation , materials science , optoelectronics , proton , diode , schottky barrier , optics , photodetector , physics , nuclear physics , quantum mechanics
We fabricated a Pt/ZnO Schottky photodiode based on single‐crystal substrates grown by the hydrothermal growth method. We measured the electrical properties and the spectral responsivity in UV region. The responsivity was 0.1 W/A and there was a sharp cutoff wavelength corresponding to the band gap of ZnO. The fabricated diode can be used as a visible–blind sensor. We also investigated the performance of the diode for the incidence of X‐rays and observed the signal obtained. We demonstrated the potential of the ZnO device for ionizing radiation.In addition, we investigated the effects of irradiating the photodiode with high energy protons. For a sample irradiated with ∼10 15 protons/cm 2 , the dark currents were observed to increase by a factor of 10. Moreover, the behavior of the forward currents significantly changed. In the current–voltage measurement 2 months after irradiation, the dark current decreased to the same level as that before irradiation. This behavior of the dark current may indicate that the defects generated by proton irradiation had been annihilated.