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Influence of Ni and Au/ N i catalysts on Ga N nanowire growth
Author(s) -
Zhao Danna,
Huang Hui,
Wu Haibo,
Ren Mingkun,
Zhu Huichao,
Liu Yan,
Sun Baojuan
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330211
Subject(s) - materials science , nanowire , chemical vapor deposition , catalysis , annealing (glass) , vapor–liquid–solid method , chemical engineering , growth rate , substrate (aquarium) , metal , nanotechnology , metallurgy , chemistry , biochemistry , geometry , mathematics , oceanography , geology , engineering
GaN nanowires (NWs) were grown on Ni‐ and Au/Ni‐coated Si (100) substrate by chemical vapor deposition via reaction of metallic Ga and NH 3 . It was found that the Au/Ni layer tends to form liquid droplets with more uniform size distribution and regular spherical shape under annealing, which facilitates the growth of straight and long NWs. The effects of NH 3 /N 2 ratio on NW growth are different for Ni and Au/Ni catalysts, due to the competition between the vapor–solid (VS) and vapor–liquid–solid (VLS) growth. The XRD analyses indicate that with decreasing NH 3 flow rate, [0001] axial growth becomes dominant with the formation of NiGa 4 catalyst.
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