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Mask‐free prototyping of metal‐oxide‐semiconductor devices utilizing focused electron beam induced deposition
Author(s) -
Shawrav Mostafa Moonir,
Wanzenboeck Heinz D.,
Belic Domagoj,
Gavagnin Marco,
Bethge Ole,
Schinnerl Markus,
Bertagnolli Emmerich
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330133
Subject(s) - electron beam induced deposition , materials science , electrode , oxide , nanowire , nanotechnology , optoelectronics , substrate (aquarium) , layer (electronics) , chemistry , scanning transmission electron microscopy , transmission electron microscopy , metallurgy , oceanography , geology
Focused electron beam induced deposition (FEBID) is a novel direct‐writing technique to produce noble metal nanostructures. In this work, FEBID has been employed for the first time to fabricate metal‐oxide‐semiconductor capacitors (MOSCAPs). Experimental parameters such as precursor temperature, substrate temperature and the (de)focus of the electron beam have been optimized to deposit electrode structures of a relatively large area within a short timeframe. Using FEBID, gold electrodes have been deposited on top of an atomic layer deposited (ALD) dielectric aluminum oxide layer. Chemical composition of the produced structures has been studied using energy dispersive X‐ray spectroscopy (EDX). Current–voltage ( I – V ) measurements have confirmed the conductivity of FEBID gold nanowires (NWs). Measured capacitance–voltage ( C – V ) characteristics of FEBID‐fabricated MOSCAP prototypes resemble the typical C – V characteristics of conventionally fabricated MOSCAPs, thus confirming the functionality of our FEBID devices. Illustration of a MOS capacitor fabricated by FEBID.