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Atomic layer deposition of Zr O 2 for graphene‐based multilayer structures: In situ and ex situ characterization of growth process
Author(s) -
Tamm Aile,
Kozlova Jekaterina,
Aarik Lauri,
Aidla Aleks,
Lu Jun,
Kiisler AlmaAsta,
Kasikov Aarne,
Ritslaid Peeter,
Mändar Hugo,
Hultman Lars,
Sammelselg Väino,
Kukli Kaupo,
Aarik Jaan
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201330106
Subject(s) - quartz crystal microbalance , graphene , materials science , chemical vapor deposition , deposition (geology) , substrate (aquarium) , atomic layer deposition , layer (electronics) , thin film , foil method , in situ , chemical engineering , dielectric , analytical chemistry (journal) , nanotechnology , optoelectronics , composite material , chemistry , organic chemistry , paleontology , oceanography , biology , adsorption , sediment , geology , engineering
Real time monitoring of atomic layer deposition by quartz crystal microbalance (QCM) was used to follow the growth of ZrO 2 thin films on graphene. The films were grown from ZrCl 4 and H 2 O on graphene prepared by chemical vapor deposition method on 100‐nm thick nickel film or on Cu‐foil and transferred onto QCM sensor. The deposition was performed at a substrate temperature of 190 °C. The growth of the dielectric film on graphene was significantly retarded compared to the process carried out on QCM without graphene. After the deposition of dielectric films, the basic structure of graphene was retained.