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Multilayered structure and enhanced thermoelectric properties of Bi 1.5 S b 0.5 T e 3 film with preferential growth
Author(s) -
Tan Ming,
Deng Yuan,
Hao Yanming
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329368
Subject(s) - materials science , thermoelectric effect , condensed matter physics , thermodynamics , physics
In this paper, uniquely (0 1 5)‐preferential growth plane and alternating stress field can favorably influence the carrier and phonon transport properties of multilayered films. The p‐type Bi 1.5 Sb 0.5 Te 3 multilayered film has been successfully fabricated by a simple thermal co‐evaporation technique. The composition, microstructure, and in‐plane thermoelectric (TE) properties of films have been characterized and measured, respectively. The measurement results show that the multilayered Bi 1.5 Sb 0.5 Te 3 film is (0 1 5)‐preferential growth. The multilayered structure film is composed of the (0 1 5)‐oriented and the ordinary nanolayers. The properties of the multilayered Bi 1.5 Sb 0.5 Te 3 film has been significantly enhanced in comparison with those of the highly (0 1 5)‐oriented and the ordinary Bi 1.5 Sb 0.5 Te 3 films. The multilayered Bi 1.5 Sb 0.5 Te 3 film with a TE dimensionless figure‐of‐merit ZT = 1.28 was obtained at room temperature. The transport mechanism of multilayered structure is proposed and investigated. The internal strain field and (0 1 5)‐preferential growth plane are the main reasons for the properties enhancement observed in the multilayered Bi 1.5 Sb 0.5 Te 3 film. Introduction of such uniquely (0 1 5)‐preferential growth plane and alternating stress field into TE films is therefore a very promising approach.