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Metal–insulator–silicon semiconductor photodetectors using Zn O nanocones as an efficient anti‐reflective coating
Author(s) -
Kim Hyunjin,
Bae Joonho
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329323
Subject(s) - photodetector , materials science , optoelectronics , quantum efficiency , semiconductor , planar , coating , silicon , wavelength , insulator (electricity) , nanotechnology , computer graphics (images) , computer science
Novel ZnO nanocone anti‐reflective coating (ARC) was realized on ITO‐Si metal–insulator–semiconductor (MIS) photodetector. The ZnO nanocone‐coated device demonstrated significant suppression of reflectance compared with that of a conventional planar device. The ZnO nanocone MIS photodetector showed a 15% enhanced external quantum efficiency (EQE) compared to a planar MIS photodetector, and indicated a flat response over a broad range of wavelength from the visible to IR spectra. In addition, the EQE of the nanocone device exhibited a stable response with respect to the angle of incidence, which indicates improved device characteristics of the ZnO nanocone ARC.