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Fabrication and UV ‐sensing properties of one‐dimensional β‐Ga 2 O 3 nanomaterials
Author(s) -
Feng Haifeng,
Hao Weichang,
Zhao Changzheng,
Xin Xiandong,
Cheng Jinyang,
Cui Yimin,
Chen Yan,
Wang Wenjun
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329318
Subject(s) - nanowire , materials science , nanomaterials , chemical vapor deposition , ultraviolet , nanotechnology , microstructure , nanostructure , fabrication , chemical engineering , morphology (biology) , characterization (materials science) , optoelectronics , analytical chemistry (journal) , composite material , chemistry , medicine , alternative medicine , pathology , engineering , chromatography , biology , genetics
β‐Ga 2 O 3 nanowires and nanobelts with a length range of tens of micrometers to a few millimeters were successfully fabricated by a simple in situ chemical vapor deposition (CVD) method under normal pressure without any catalysts. The morphology and microstructure of the samples were studied by SEM, XRD, and EDS. The results indicated that the morphology of Ga 2 O 3 depends on the effective heating time. Ga 2 O 3 nanostructures were mainly collected at the gallium source position instead of in the downstream area. So, we propose that the growth process can be explained by a vapor–solid (VS) model. The ultraviolet (UV) sensing properties of a single nanowire were tested. From the nonlinear I – V curves, we find that a single nanowire behaves as a rectifier and has asymmetric characteristics. The photoresponse characterization presents that response time and recovery time were about 0.32 and 0.08 s, respectively. Our result indicated that a single β‐Ga 2 O 3 nanowire possesses excellent UV sensing properties and it should be a good candidate for UV‐sensor development.