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Enhancing air stability of pentacene‐based OTFTs with pentacene double layer
Author(s) -
Saikia Dipok,
Saikia Prasana K.
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329243
Subject(s) - pentacene , materials science , layer (electronics) , fabrication , active layer , optoelectronics , amorphous solid , substrate (aquarium) , nanotechnology , thin film transistor , chemistry , organic chemistry , medicine , alternative medicine , oceanography , pathology , geology
A new technique called a pentacene double layer is proposed in this paper to enhance the air stability of the pentacene‐based OTFTs. A practically insulating amorphous layer of pentacene (P‐II) deposited at very low substrate temperature is used as protective layer above the pentacene active layer (P‐I) so that an encapsulation layer of SiO 2 can be deposited without damaging the active layer. This technique reduced the probability of interaction of O 2 and H 2 O with the active pentacene layer to zero during fabrication of the devices (multiple breakdown process), and hence can be fabricated without using nitrogen ambient chamber as a result the devices become highly cost effective.