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Effects of O 2 plasma treatment on low temperature solution‐processed zinc tin oxide thin film transistors
Author(s) -
Lee JeongSoo,
Song SeungMin,
Kim YongHoon,
Kwon JangYeon,
Han MinKoo
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329170
Subject(s) - thin film transistor , threshold voltage , halide , plasma , dissociation (chemistry) , materials science , tin , zinc , analytical chemistry (journal) , oxide , electron mobility , saturation (graph theory) , penning trap , transistor , chemistry , ion , inorganic chemistry , layer (electronics) , voltage , optoelectronics , metallurgy , nanotechnology , electrical engineering , mathematics , engineering , quantum mechanics , chromatography , physics , organic chemistry , combinatorics
The electrical characteristics such as threshold voltage, saturation mobility, and electrical reliability of low temperature (350 °C) solution‐processed zinc tin oxide (ZTO) thin film transistors (TFTs) were improved considerably by employing O 2 plasma treatment. O 2 plasma treatment was performed by plasma asher and causes preferential dissociation of weak halide‐related bonding such as Cl bonding by ion bombardment. After O 2 plasma treatment, the threshold voltage decreased from 25.0 to 10.7 V because of an increase in electron concentration due to the reduction of Cl bonding and simultaneous composition of O‐related bonding. The saturation mobility was increased from 0.09 to 0.58 cm 2 V −1 s −1 because of the increase in electron concentration and reduction of the halide residues such as Cl atoms acting as trap states by employing O 2 plasma treatment. Moreover, the electrical reliability such as threshold voltage shift was improved from 5.34 to 3.23 V for positive gate bias‐stress because O 2 plasma reduced the halide residues such as Cl atoms acting as trap states.