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n‐ Z n O /i‐ I n G a N /p‐ G a N heterostructure for solar cell application
Author(s) -
Nam SeungYong,
Choi YongSeok,
Song YoungHo,
Jung MyoungHo,
Kang Chang Mo,
Kong DukJo,
Park SeongJu,
Lee JeongYong,
Namkoong Gon,
Lee DongSeon
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329158
Subject(s) - solar cell , materials science , heterojunction , optoelectronics
We report hybrid n‐ZnO/i‐InGaN/p‐GaN solar cells in which the n‐GaN layer of n‐GaN/i‐InGaN/p‐GaN solar cell was replaced with n‐type ZnO. In this study, inverted structures were used for hybrid ZnO/nitride solar cells where p‐type GaN was first grown on sapphire substrate, followed by i‐InGaN and n‐ZnO layers. The as‐fabricated device showed high series resistance and low energy conversion efficiency due to the formation of damaged p‐GaN region during dry etching. On the other hand, formation of microrods on the p‐GaN eased the removal of the damaged p‐GaN resulting in significantly lowered series resistance and enhanced energy conversion efficiency. (a) n‐ZnO/i‐InGaN/p‐GaN solar cell structure without microrods, (b) n‐ZnO/i‐InGaN/p‐GaN solar cell structure with microrods, and (c) magnified image of the dashed box on (b).