Premium
Effect of annealing temperature on the properties of spray deposited Cu 2 S n S 3 thin films
Author(s) -
Chalapathi U.,
Jayasree Y.,
Uthanna S.,
Sundara Raja V.
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329157
Subject(s) - monoclinic crystal system , materials science , tetragonal crystal system , annealing (glass) , crystallite , thin film , analytical chemistry (journal) , band gap , raman spectroscopy , crystallography , nanotechnology , metallurgy , optics , crystal structure , chemistry , optoelectronics , physics , chromatography
Copper tin sulphide (Cu 2 SnS 3 ), a promising solar cell absorber layer for thin film heterojunction solar cells, was grown onto soda‐lime glass substrates by spray pyrolysis technique. The effect of annealing Cu 2 SnS 3 (CTS) films in sulphur atmosphere at different annealing temperatures is investigated. From X‐ray diffraction (XRD) and Raman spectra analysis, it is observed that the films exhibit polymorphism with tetragonal and monoclinic CTS phases. While the as‐deposited films and the films annealed at 400 and 450 °C are found to contain tetragonal as well as monoclinic CTS phases, the films annealed at 500 °C are found to be mostly monoclinic CTS. The crystallite size is found to increase from 15 to 40 nm with increase of annealing temperature. From energy dispersive X‐ray spectrometer (EDS) analysis, the films annealed at 400 and 450 °C are found to be near‐stoichiometric Cu 2 SnS 3 . The direct optical band gap of CTS films with dominant tetragonal phase is found to be ∼1.10 eV, while that of films with dominant monoclinic phase is found to be 0.97 eV.