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Deposition of CIGS films by hydrazine‐free solution method
Author(s) -
Zhou WenHui,
Li PengWei,
Jiao Jie,
Hou ZeLiang,
Zhou ZhengJi,
Wu SiXin
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329148
Subject(s) - copper indium gallium selenide solar cells , materials science , indium , thin film , hydrazine (antidepressant) , chemical engineering , gallium , deposition (geology) , nanotechnology , metallurgy , chemistry , paleontology , chromatography , sediment , engineering , biology
In this paper, copper indium gallium diselenide (CIGS) thin films were deposited by a hydrazine‐free solutions method. In the proposed method, acetylacetonate salts and Se powder were simply dissolved in triethylenetetramine under ambient conditions, respectively. These two solutions were mixed in a certain percentage to form the final CIGS precursor solution. CIGS films were obtained by a drop‐coating method and subsequently annealed in nitrogen atmosphere. The facile formation of the precursor solution without the need to prefabricate nanoparticles enables a rapid and easy processing. The high stability of the solution in air further ensures the precursor preparation and the film deposition in ambient conditions without a glove box. The crystal structure, morphology, composition, electronic state, optical, and electrical qualities of CIGS films were characterized by XRD, SEM, EDS, XPS, UV–vis, and I – V . The easy preparation and low‐cost nature of the proposed strategy make it quite attractive. The proposed synthesis strategy developed in this work may be used as a general process for low‐cost deposition of CIGS film and may have bright application prospects in high‐efficiency, yet low‐cost, photovoltaic areas in the future.