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Fabrication of 3 D ‐silicon micro‐pillars/walls decorated with aluminum‐ Z n O / Z n O nanowires for optoelectric devices
Author(s) -
Karaagac Hakan,
Logeeswaran V. J.,
Islam M. Saif
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329135
Subject(s) - materials science , deep reactive ion etching , heterojunction , nanowire , silicon , fabrication , etching (microfabrication) , optoelectronics , ultraviolet , nanotechnology , aluminium , deposition (geology) , reactive ion etching , composite material , medicine , alternative medicine , layer (electronics) , pathology , paleontology , sediment , biology
In this study, regularly patterned and hierarchically structured silicon (Si) micro‐scale pillars and walls with high aspect ratio were fabricated using the deep reactive ion etching (DRIE) process. Dense arrays of ZnO nanowires were hydrothermally grown on the surface of the Si structures subsequent to the deposition of Aluminum–ZnO (AZO) thin films onto the vertically oriented p ‐ and n ‐type Si micro‐scale pillars and walls – resulting in three‐dimensional (3D) heterostructures. Electrical and optical measurements of the fabricated p – n nano‐heterojunctions demonstrate strong capabilities for detecting ultraviolet (UV)–visible (VIS) photons with drastically reduced reflection loss. We also demonstrate low‐voltage sensing of gases using these structures through the field ionization process.