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Effect of Zr addition on critical current density of ( Y , G d) B a 2 C u 3 O y and ( Y , E u, G d) B a 2 C u 3 O y thin films deposited by TFA ‐ MOD process
Author(s) -
Jian Hongbin,
Yang Zhaorong,
Zhu Xuebin,
Sun Yuping
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329064
Subject(s) - critical current , materials science , flux pinning , current density , analytical chemistry (journal) , crystallography , condensed matter physics , superconductivity , chemistry , physics , chromatography , quantum mechanics
(Y, Gd)Ba 2 Cu 3 O y and (Y, Eu, Gd)Ba 2 Cu 3 O y films with and without Zr addition are prepared. The effect of Zr addition on critical current density J c is different for the two series. Compared to (Y, Gd)Ba 2 Cu 3 O y films without Zr addition, J c ( B ) is clearly enhanced by adding Zr, especially in high field. But for (Y, Eu, Gd)Ba 2 Cu 3 O y films, the addition of Zr is disadvantageous to J c . Analysis indicates that the flux pinning mechanism is altered for (Y, Eu, Gd)Ba 2 Cu 3 O y films, whereas it remains the same for (Y, Gd)Ba 2 Cu 3 O y films after adding Zr.

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