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Forming‐free Si N ‐based resistive switching memory prepared by RF sputtering
Author(s) -
Kim HeeDong,
An HoMyoung,
Hong Seok Man,
Kim Tae Geun
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329021
Subject(s) - sputtering , ohmic contact , materials science , optoelectronics , thermal conduction , reliability (semiconductor) , resistive random access memory , resistive touchscreen , random access memory , voltage , layer (electronics) , electrical engineering , nanotechnology , composite material , thin film , computer science , engineering , physics , computer hardware , power (physics) , quantum mechanics
A forming‐free SiN‐based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10‐nm thick SiN film, the memory device showed forming‐free switching behavior under ±2 V/100 ns. The conduction mechanisms at low‐ and high‐resistance states were verified by Ohmic behavior and modified space‐charge‐limited conduction, respectively. In a reliability test, the device exhibits good endurance over 10 9 cycles and long data retention over 10 5 s at 85 °C. These results demonstrate that SiN‐based RSM devices can be readily available without forming processes using an RF sputtering method.