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Stimulated emission at 257 nm from optically‐pumped Al G a N / A l N heterostructure on Al N substrate
Author(s) -
Lochner Zachary,
Li XiaoHang,
Kao TsungTing,
Satter Md. Mahbub,
Kim Hee Jin,
Shen ShyhChiang,
Yoder P. Douglas,
Ryou JaeHyun,
Dupuis Russell D.,
Sun Kewei,
Wei Yong,
Li Ti,
Fischer Alec,
Ponce Fernando A.
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201329013
Subject(s) - materials science , lasing threshold , optoelectronics , laser , heterojunction , substrate (aquarium) , ultraviolet , cladding (metalworking) , sapphire , diode , layer (electronics) , wavelength , optics , nanotechnology , composite material , oceanography , physics , geology
Optically pumped deep‐ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of Al x Ga 1− x N/AlN grown on (0001) AlN substrate. The substantial reduction of the threading dislocation density by using a native AlN substrate over sapphire substrates is critical to the realization of the photo‐pumped lasers. The threshold power density was 1.88 MW cm −2 . The layers below the active region were Si‐doped and had bottom waveguide and cladding layer n ‐ type structures required for diode lasers, thus demonstrating the feasibility of deep UV lasing for the proposed structures on AlN substrates by current injection, provided that effective hole injection layers are included.