Dual‐acceptor doped  p ‐ZnO:(As,Sb)/ n ‐GaN heterojunctions grown by PA‐MBE as a spectrum selective ultraviolet photodetector | Zendy

Przeździecka E. | Zendy; Wierzbicka A. | Zendy; Dłużewski P. | Zendy; Stachowicz M. | Zendy; Jakieła R. | Zendy; Gościński K. | Zendy; Pietrzyk M. A. | Zendy; Kopalko K. | Zendy; Kozanecki A. | Zendy

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Dual‐acceptor doped p ‐ZnO:(As,Sb)/ n ‐GaN heterojunctions grown by PA‐MBE as a spectrum selective ultraviolet photodetector

Author(s) -

Przeździecka E.,

Wierzbicka A.,

Dłużewski P.,

Stachowicz M.,

Jakieła R.,

Gościński K.,

Pietrzyk M. A.,

Kopalko K.,

Kozanecki A.

Publication year - 2014

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201300758

Subject(s) - photocurrent , heterojunction , photodetector , optoelectronics , materials science , ultraviolet , doping , acceptor , diode , dark current , detector , wide bandgap semiconductor , optics , physics , condensed matter physics

High quality heterojunctions based on dual acceptor doped ZnO:(As,Sb) films grown on n ‐type GaN templates were used for UV detector application. Photodetectors made on the obtained diodes appeared to have a high selectivity in the UV spectral range. Photocurrent measurements revealed a very narrow response window of ∼12 nm only. The difference between the dark and bright current was large and the ratio of these currents was about 10 3 . The response time of the detectors is shorter than 1 ms.

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