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Dual‐acceptor doped p ‐ZnO:(As,Sb)/ n ‐GaN heterojunctions grown by PA‐MBE as a spectrum selective ultraviolet photodetector
Author(s) -
Przeździecka E.,
Wierzbicka A.,
Dłużewski P.,
Stachowicz M.,
Jakieła R.,
Gościński K.,
Pietrzyk M. A.,
Kopalko K.,
Kozanecki A.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300758
Subject(s) - photocurrent , heterojunction , photodetector , optoelectronics , materials science , ultraviolet , doping , acceptor , diode , dark current , detector , wide bandgap semiconductor , optics , physics , condensed matter physics
High quality heterojunctions based on dual acceptor doped ZnO:(As,Sb) films grown on n ‐type GaN templates were used for UV detector application. Photodetectors made on the obtained diodes appeared to have a high selectivity in the UV spectral range. Photocurrent measurements revealed a very narrow response window of ∼12 nm only. The difference between the dark and bright current was large and the ratio of these currents was about 10 3 . The response time of the detectors is shorter than 1 ms.