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Technology for III‐N heterogeneous mixed‐signal electronics
Author(s) -
Chen Kevin J.,
Kwan Alex Man Ho,
Jiang Qimeng
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300543
Subject(s) - amplifier , electronics , signal (programming language) , electrical engineering , power electronics , reliability (semiconductor) , integrated circuit , power (physics) , transistor , electronic circuit , microwave , materials science , voltage , monolithic microwave integrated circuit , optoelectronics , electronic engineering , computer science , engineering , cmos , telecommunications , physics , quantum mechanics , programming language
III‐N devices are suitable for high power RF/microwave amplifier, high temperature electronics, and power switches applications, and the peripheral mixed‐signal electronics with sensing, protection, and control functions could provide optimized performance, increased functionality, and enhanced reliability. This paper addresses the technology to discuss the technology options of implementing III‐N mixed‐signal circuits, and then reviews the recent progress in the expansion of design library, based on monolithically integrated enhancement/depletion (E/D)‐mode AlGaN/GaN HEMTs on GaN‐on‐silicon substrates. An integrated GaN proportional‐to‐absolute‐temperature (PTAT) voltage source.