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In situ SiN x gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si
Author(s) -
Lu Xing,
Ma Jun,
Liu Zhaojun,
Jiang Huaxing,
Huang Tongde,
Lau Kei May
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300495
Subject(s) - materials science , metalorganic vapour phase epitaxy , passivation , gate dielectric , optoelectronics , dielectric , heterojunction , chemical vapor deposition , high κ dielectric , thin film , analytical chemistry (journal) , leakage (economics) , saturation current , transistor , epitaxy , nanotechnology , chemistry , voltage , electrical engineering , layer (electronics) , engineering , chromatography , economics , macroeconomics
In situ SiN x grown by metal‐organic chemical vapor deposition (MOCVD) was employed as the gate dielectric for ultra‐thin‐barrier AlN/GaN metal‐insulator‐semiconductor high electron mobility transistors (MISHEMTs) on Si substrates. Despite the ultra‐thin barrier of 1.5 nm, low reverse leakage current of below 10 −7 A cm −2 was obtained with a 7 nm in situ SiN x gate dielectric. The good surface passivation effects of in situ SiN x were also demonstrated by the enhanced source/drain (S/D) current density and the reduced drain current degradation. Furthermore, interface trapping effects in the in situ SiN x /AlN/GaN heterostructures were investigated by double‐mode capacitance–voltage ( C – V ) measurements and frequency dependent conductance analysis. A trap states density of 1.9–3.4 × 10 12 cm −2 eV −1 with a time constant of 0.8–17 µs were deduced.