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Top–down fabrication and characterization of axial and radial III‐nitride nanowire LEDs
Author(s) -
Wang George T.,
Li Qiming,
Wierer Jonathan J.,
Koleske Daniel D.,
Figiel Jeffrey J.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300491
Subject(s) - fabrication , nanowire , light emitting diode , materials science , context (archaeology) , characterization (materials science) , nitride , optoelectronics , gallium nitride , nanotechnology , layer (electronics) , medicine , paleontology , alternative medicine , pathology , biology
Complex axial and radial type III‐nitride InGaN/GaN nanowire LEDs are realized using a recently developed top–down fabrication approach which enables high quality GaN‐based nanowires with independently controlled height, pitch, and diameter. In this paper, we report on the fabrication, structural characterization, and luminescence of these two different structures and discuss their relative merits, weaknesses, and prospects in the context of the field. Axial (left) and radial (right) nanowire LEDs fabricated by a two‐step top–down method.