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Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular‐striped AlN/sapphire template
Author(s) -
Arauchi Takuji,
Takeuchi Shotaro,
Nakamura Kunihiko,
Khan Dinh Thanh,
Nakamura Yoshiaki,
Miyake Hideto,
Hiramatsu Kazumasa,
Sakai Akira
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300461
Subject(s) - mosaicity , materials science , reciprocal lattice , anisotropy , curvature , diffraction , sapphire , wafer , morphology (biology) , lattice (music) , crystal structure , epitaxy , crystallography , lattice constant , condensed matter physics , optics , geometry , optoelectronics , composite material , chemistry , laser , physics , mathematics , layer (electronics) , biology , acoustics , genetics
We have investigated crystalline morphology such as wafer curvature, mosaicity, and lattice tilting of an AlN film grown on a triangular‐striped AlN/α‐Al 2 O 3 template by X‐ray rocking curve (XRC) and reciprocal space map (RSM) measurements. The result of XRC for the AlN (0002) plane showed the difference of the value in the wafer curvature between the [11–20] and [1–100] directions. This indicates the anisotropic strain relaxation preferentially along [11–20] direction due to the triangular‐striped structure and the voids in the AlN film. From the results of asymmetric RSMs for AlN 11–24 and 1–104 diffractions, the broadening of the reciprocal lattice spots in elliptical shape was observed. These results reflect anisotropic crystalline morphology in the AlN film. The elliptical diffraction spot for AlN 11–24 predominantly indicates the lattice tilting fluctuation around the [1–100] axes while that for AlN 1–104 indicates the lattice spacing fluctuation. Anisotropic crystalline morphology in the AlN film grown on the triangular‐striped template has been clarified in combination with XRC and asymmetric RSMs.