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Photoresponse of pentacene‐based transistors
Author(s) -
Loffredo Fausta,
Bruno Annalisa,
Del Mauro Anna De Girolamo,
Grimaldi Immacolata Angelica,
Miscioscia Riccardo,
Nenna Giuseppe,
Pandolfi Giuseppe,
Petrosino Mario,
Villani Fulvia,
Minarini Carla,
Facchetti Antonio
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300395
Subject(s) - pentacene , optoelectronics , photocurrent , photoexcitation , materials science , photodiode , transistor , irradiation , threshold voltage , photodetector , laser , wavelength , thin film transistor , voltage , optics , nanotechnology , excitation , physics , layer (electronics) , quantum mechanics , nuclear physics
Organic thin film phototransistor (OPTs) devices in bottom‐gate/top‐contact configuration were fabricated and used as analytic system to study the electrical and optical properties of pentacene. The channel of the OTFT devices was illuminated by laser radiation of wavelength 670 nm and the effect of irradiation on the electrical responses of the devices was investigated at different temperatures and incident optical powers. The photoresponse and the electrical parameters of the devices (mobility, threshold voltages and on/off ratios – I ON/ I OFF ) were evaluated in order to investigate the relationship between the light sensing behavior of the phototransistors and their electrical performances. Moreover, the OPT's time‐resolved electrical response to light irradiation was modelled to decouple the fast‐varying photoexcitation effects from slow bias stress decays in order to investigate the reversibility properties, the time stability of electrical responses and the photocurrent.