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Charge trapping and physical parameters of Er 3+ doped light‐emitting field‐effect transistors
Author(s) -
Ramírez J. M.,
Berencén Y.,
Garrido B.
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300343
Subject(s) - materials science , optoelectronics , electroluminescence , field effect transistor , doping , transistor , trapping , electron mobility , threshold voltage , gate oxide , debye length , field effect , ion , voltage , layer (electronics) , chemistry , electrical engineering , nanotechnology , organic chemistry , biology , engineering , ecology
The electrical properties of light‐emitting field‐effect transistors with Er 3+ doped gate oxides formed either by a Si‐rich oxide or by a SiO 2 are studied. Measured output and transfer characteristics in combination with C – V curves allowed for the main device parameters determination (flat‐band voltage, Debye length, or low‐field mobility). Decreased threshold voltage, interface charge trapping and low‐field mobility enhancement in devices containing Si‐rich oxides respect to those with Er 3+ doped SiO 2 gate are found. In addition, the implantation of Er 3+ ions in the gate oxide produced significant low‐field mobility reduction in the transistor inversion layer. Typical polarization scheme and device cross section of a light‐emitting field‐effect transistor (left). Erbium electroluminescence spectrum collected from the top of the polysilicon gate (right).

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