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Influence of growth temperature on the morphology and luminescence of Ga 2 O 3 :Mn nanowires
Author(s) -
Gonzalo Alicia,
Nogales Emilio,
Méndez Bianchi,
Piqueras Javier
Publication year - 2014
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300310
Subject(s) - cathodoluminescence , nanowire , luminescence , materials science , gallium , atmospheric temperature range , scanning electron microscope , raman spectroscopy , crystal structure , photoluminescence , oxide , analytical chemistry (journal) , ion , nanotechnology , crystallography , optoelectronics , optics , chemistry , composite material , metallurgy , physics , chromatography , meteorology , organic chemistry
Mn doped β‐Ga 2 O 3 nanowires have been obtained by a thermal evaporation method on a gallium oxide substrate. The growth temperature has been varied in the range 1300–1500 °C. The morphology of the resulting structures has been found to depend on this temperature, as observed in the images obtained with scanning electron microscopy. The structures grown on the sample at 1500 °C are both isolated microrods and interconnected rods. At lower temperatures, 1300 and 1400 °C, nanowires with widths of about 100 nm and stair‐shaped microcrystals were found. Raman analysis demonstrates that both nanowires and microrods present the β‐Ga 2 O 3 crystal structure. In addition, Mn related light emission has been found to depend on the growth temperature. The assessment of luminescence properties have been carried out by cathodoluminescence analysis. The results show an intense orange emission in the nanowires and green emission in the microrods. These bands are associated to the manganese ions incorporated into the gallium oxide crystal lattice.