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Optical study of carrier diffusion and recombination in CVD diamond
Author(s) -
Kozák Martin,
Trojánek František,
Malý Petr
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300034
Subject(s) - photoluminescence , diffusion , exciton , chemical vapor deposition , materials science , carrier lifetime , diamond , excited state , molecular physics , atomic physics , chemical physics , chemistry , optoelectronics , silicon , condensed matter physics , physics , thermodynamics , composite material
We report on the measurements of nonequilibrium carrier dynamics in monocrystalline diamond prepared by the chemical vapor deposition (CVD) technique. Nonlinearly excited laser‐induced transient grating (LITG) and time‐resolved photoluminescence (PL) were used for investigation of carrier diffusion and recombination. Diffusion constant was observed to be strongly dependent on the sample temperature and carrier density ( D = 2.5–35 cm 2 s −1 ) what was explained in terms of the density dependent carrier‐carrier scattering. The new method based on the time‐resolved PL was proposed for measuring the diffusion and recombination dynamics of excitons. The measured exciton lifetime τ FE = 700–800 ns was temperature independent between 100 and 295 K.