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Platinum and gold diffusion monitor vacancy profiles induced into silicon wafers by aluminum alloying
Author(s) -
Abdelbarey D.,
Kveder V.,
Schröter W.,
Seibt M.
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201300020
Subject(s) - vacancy defect , getter , wafer , aluminium , materials science , platinum , silicon , diffusion , single crystal , analytical chemistry (journal) , crystallography , metallurgy , chemistry , nanotechnology , thermodynamics , optoelectronics , catalysis , biochemistry , physics , chromatography
In this paper, we use the gold and platinum marker method, to confirm our preliminary finding that aluminum indiffusion into Si crystal during so‐called “aluminum gettering” (AlG) can result in the injection of vacancies into Si crystal. Depth profiles of Au in p‐type Si have been studied by the DLTS after diffusion at 850 °C for 2 h prior to and subsequent to AlG. The donor concentration attributed to Au s is about two orders of magnitude higher compared with that measured in samples without AlG. Similar results were also observed for Pt. The increase in Pt s or Au s concentration in the silicon bulk provides the most direct evidence so far that AlG with 400 nm Al layer, for 50 min at 1100 °C injects vacancies with non‐equilibrium concentrations of about 10 15 cm −3 . The possible mechanism of vacancies generation is discussed.