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Comparative study of phase structure and dielectric properties for K 0.5 B i 0.5 T i O 3  B i A l O 3 and La A l O 3  B i A lO 3
Author(s) -
Hou Yudong,
Zheng Mupeng,
Si Meiju,
Cui Lei,
Zhu Mankang,
Yan Hui
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228854
Subject(s) - dielectric , materials science , perovskite (structure) , aurivillius , phase (matter) , dopant , doping , analytical chemistry (journal) , crystallography , ferroelectricity , chemistry , optoelectronics , organic chemistry , chromatography
In this work, two perovskite‐type compounds, K 0.5 Bi 0.5 TiO 3 and LaAlO 3 , have been selected as host material to incorporate with BiAlO 3 using a solid‐state reaction route. The phase evolution and dielectric properties for both systems have been investigated in detail. For the K 0.5 Bi 0.5 TiO 3 BiAlO 3 system, it is interesting to find that when using Bi 2 O 3 , Al 2 O 3 , K 2 CO 3 , and TiO 2 as starting materials, the formed compounds are K 0.5 Bi 0.5 TiO 3 K 0.5 Bi 4.5 Ti 4 O 15 and Al 2 O 3 only plays a dopant role. There are two distinct dielectric peaks appearing in the patterns of temperature dependence of dielectric constant, corresponding to the phase‐transition points of perovskite‐type K 0.5 Bi 0.5 TiO 3 and Aurivillius‐type K 0.5 Bi 4.5 Ti 4 O 15 , independently. In comparison, using Bi 2 O 3 , Al 2 O 3 , and La 2 O 3 as starting materials, the pure perovskite phase LaAlO 3 BiAlO 3 can be obtained. Compared to the inherent paraelectric behavior in LaAlO 3 , the diffuse phase‐transition phenomena can be observed in the LaAlO 3 BiAlO 3 binary system, which corresponds well to the Vogel–Fulcher (VF) relationship. Moreover, compared to pure LaAlO 3 , the synthesized LaAlO 3 BiAlO 3 compound shows enhanced dielectric properties, which are promising in application as gate dielectric materials.

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