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Enhanced efficiency in In G a N ‐based photovoltaic devices combined with nanocrystalline Bi 2 O 3 / P 3 HT heterojunction structures
Author(s) -
Lai ChunFeng,
Chang ChungChieh,
Wen MinHsueh,
Lin ChungKwei,
Wu MauKuen
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228847
Subject(s) - heterojunction , materials science , nanocrystalline material , photovoltaic system , optoelectronics , energy conversion efficiency , exciton , thin film , nanotechnology , electrical engineering , physics , engineering , quantum mechanics
This study experimentally investigates the ability of Bi 2 O 3 /P3HT heterojunction thin films to improve the power‐conversion efficiency of InGaN‐based photovoltaic (PV) devices. InGaN‐based PV devices combined with Bi 2 O 3 /P3HT heterojunctions were prepared using the pulsed laser deposition method. The Bi 2 O 3 /P3HT heterojunction creates carriers that combine with excitons through the light‐absorbance process, which enhances the power‐conversion efficiency of InGaN PV devices by approximately 36%. Thus, these Bi 2 O 3 /P3HT heterojunctions can provide an efficiency improvement in InGaN PV devices and other related solar‐cell applications.