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Silicon doping effect on the crystallization behavior of Ge 2 S b 2 T e 5 film
Author(s) -
Jiang Yifan,
Xu Ling,
Chen Jing,
Zhang Rui,
Su Weining,
Yu Yao,
Ma Zhongyuan,
Xu Jun
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228840
Subject(s) - materials science , doping , thin film , raman spectroscopy , amorphous solid , blueshift , analytical chemistry (journal) , high resolution transmission electron microscopy , evaporation , band gap , crystallization , absorption spectroscopy , crystal (programming language) , grain size , crystallography , photoluminescence , optics , nanotechnology , optoelectronics , chemistry , transmission electron microscopy , composite material , physics , organic chemistry , chromatography , computer science , thermodynamics , programming language
Pure Ge 2 Sb 2 Te 5 thin films and Si‐doped Ge 2 Sb 2 Te 5 thin films were deposited by electron beam evaporation method. The property of Si‐doped Ge 2 Sb 2 Te 5 films are compared with that of pure Ge 2 Sb 2 Te 5 films. Through in situ resistance measurement and I – V characteristic tests, an improvement of amorphous stability and an increase of crystalline resistivity are observed. The phase‐separation phenomenon is observed in TEM pictures and a distinct decrease of crystal grain size in Si‐doped Ge 2 Sb 2 Te 5 thin film can be seen in HRTEM pictures. A blueshift and broadening of peaks after Si doping in Raman spectra are found and from absorption spectra, the broadening of crystalline optical bandgap in Si‐doped Ge 2 Sb 2 Te 5 thin film is proved. Finally, the behavior of doped Si atoms is proposed to explain the effect of Si doping in Ge 2 Sb 2 Te 5 thin film.