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Donor and acceptor doping effects on the electrical conductivity of Ca B i 2 N b 2 O 9 ceramics
Author(s) -
Chen Huanbei,
Guo Xiangxin,
Cui Zhonghui,
Zhai Jiwei
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228804
Subject(s) - electrical resistivity and conductivity , doping , dopant , acceptor , materials science , ceramic , grain boundary , conductivity , analytical chemistry (journal) , mineralogy , chemistry , condensed matter physics , metallurgy , optoelectronics , microstructure , electrical engineering , physics , engineering , chromatography
Abstract The effects of donor dopants and acceptor dopants (A and B sites) on the resistivity of CaBi 2 Nb 2 O 9 (CBN) ceramics were studied. The results indicate that the dominant conduction mechanism of pure CBN is p‐type. When the donor doping amount x < 0.05 on A site and x < 0.02 on B site, the resistivity increased with increasing donor doping. With a further increase of donor doping, the resistivity decreased since conductivity mechanism changes from p‐type to n‐type. The resistivity with acceptor doping is decreased at low temperature and equal to the pure CBN ceramic at high temperature since the resistivity of the grain boundary decreases. This work provides a way to obtain high‐resistivity CBN ceramics by appropriate donor doping, which is benefit for use in high‐temperature piezoelectrics.